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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10023/D MJ10023 Designer'sTM Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switchmode applications such as: * * * * * AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn-Off Times 150 ns Inductive Fall Time @ 25_C (Typ) 300 ns Inductive Storage Time @ 25_C (Typ) * Operating Temperature Range - 65 to + 200_C * 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MAXIMUM RATINGS 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS CASE 197A-05 TO-204AE (TO-3) 100 15 IIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD Max 400 600 80 40 80 20 40 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C 250 143 1.43 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 0.7 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 275 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Designer's and SWITCHMODE are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. (c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIII IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ10023 (1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Inductive Load, Clamped (Table 1) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Diode Forward Voltage (IF = 20 Adc) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.2 Adc) (IC = 20 Adc, IB = 1.2 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) (IC = 40 Adc, IB = 5.0 Adc) (IC = 20 Adc, IB = 10 Adc, TC = 100_C) DC Current Gain (IC = 10 Adc, VCE = 5.0 V) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB = 2.0 V, IC = O) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) 2 1.0 Adc, (VCC = 250 Vdc, IC = 20 A, IB1 = 1 0 Ad Vd A VBE(off) = 5 0 V tp = 50 s, s 5.0 V, Duty Cycle 2.0%) yy ) Characteristic (ICM = 20 A, VCEM = 250 V, IB1 = 1 0 A A V 1.0 A, VBE(off) = 5 V, TC = 25 C) 25_C) (ICM = 20 A, VCEM = 250 V, IB1 = 1 0 A A V 1.0 A, VBE(off) = 5 V, TC = 100_C) 100 C) v 2%. v VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA IEBO ICER Motorola Bipolar Power Transistor Device Data ICEV Cob hFE IS/b tsv tsv Vf td tc tc ts tr tf tfi tfi Min 150 400 50 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.15 0.03 Typ 0.3 1.0 0.3 0.6 1.9 0.3 0.9 0.4 2.5 -- -- -- -- -- -- -- -- -- -- -- -- See Figure 14 See Figure 13 0.25 5.0 Max 600 600 175 2.0 4.4 0.9 2.5 1.2 0.2 5.0 2.5 2.5 2.2 5.0 2.5 5.0 -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc pF s s s s s s s s s s -- MJ10023 TYPICAL ELECTRICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 TJ = 100C 200 hFE, DC CURRENT GAIN 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.01 0.02 0.05 0.2 0.5 1.0 0.1 IB, BASE CURRENT (AMP) 2.0 5.0 10 IC = 10 A IC = 20 A IC = 40 A TJ = 100C TJ = 25C 100 50 VCE = 5 V 30 0.4 1.0 10 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 20 40 Figure 1. DC Current Gain Figure 2. Collector Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.4 1.0 2.0 5.0 10 20 40 VCE @ 25C VCE @ 100C IC/IB = 10 VBE(sat), BASE-EMITTER 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.4 1.0 2.0 5.0 10 20 40 VBE @ 100C VBE @ 25C IC/IB = 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 104 VCE = 250 V IC, COLLECTOR CURRENT ( A) 103 C, CAPACITANCE (pF) + 0.6 102 101 TJ = 125C 100C 75C 400 200 100 100 25C 10 -1 - 0.2 0 + 0.2 + 0.4 + 0.8 50 40 4.5 10 20 50 100 200 400 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Cob, Output Capacitance Motorola Bipolar Power Transistor Device Data 3 MJ10023 Table 1. Test Conditions for Dynamic Performance VCEO(sus) 20 1 RBSOA AND INDUCTIVE SWITCHING INDUCTIVE TEST CIRCUIT RESISTIVE SWITCHING TURN-ON TIME 1 INPUT CONDITIONS 5V 0 2 1 TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1 2 Rcoil Lcoil VCC IB1 INPUT SEE ABOVE FOR DETAILED CONDITIONS PW Varied to Attain IC = 100 mA IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. VCC = 250 V RL = 12.5 Pulse Width = 25 s 2 CIRCUIT VALUES Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) Lcoil = 180 H Rcoil = 0.05 VCC = 20 V OUTPUT WAVEFORMS TEST CIRCUITS ICM t1 tf tf Clamped t t1 Adjusted to Obtain IC t1 RESISTIVE TEST CIRCUIT TUT 1 2 RL VCC [ Lcoil (ICM) VCC VCEM TIME t2 t2 Vclamp t [ Lcoil (ICM) Vclamp Test Equipment Scope -- Tektronix 475 or Equivalent ICM 90% VCEM IC tsv trv tc VCE IB 10% VCEM 90% IB1 10 VCEM 90% ICM tfi tti Vclamp I B2(pk), BASE CURRENT (AMPS) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 TIME 0 1.0 5.0 6.0 7.0 2.0 3.0 4.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 8.0 IC = 20 A IB1 = 1 A Vclamp = 250 V TJ = 25C 10% ICM 2% IC Figure 7. Inductive Switching Measurements 2.0 1.75 1.5 t, TIME ( s) 1.25 1.0 0.75 0.5 0.25 0 0 1.0 tc @ 25C tc @ 100C tsv @ 25C tsv @ 100C Figure 8. Typical Peak Reverse Base Current ICM = 20 A IB1 = 1 A VCEM = 250 V 5.0 6.0 7.0 2.0 3.0 4.0 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) 8.0 Figure 9. Typical Inductive Switching Times 4 Motorola Bipolar Power Transistor Device Data MJ10023 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 - 90% VCEM tfi = Current Fall Time, 90 - 10% ICM tti = Current Tail, 10 - 2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222A: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi t c . However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user orinented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. RESISTIVE SWITCHING 2.0 1.0 0.5 t, TIME ( s) t, TIME ( s) VCC = 250 V IC/IB1 = 20 TJ = 25C 2.0 1.0 0.5 tf 0.2 0.1 0.05 td 0.4 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) 20 40 0.02 VCC = 250 V IC/IB1 = 20 VBE(off) = 5 V ts 0.2 tr 0.1 0.05 0.02 0.4 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) 20 40 Figure 10. Typical Turn-On Switching Times Figure 11. Typical Turn-Off Switching Times 1.0 0.5 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.2 0.1 RJC(t) = r(t) RJC RJC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 10 t, TIME (ms) 100 P(pk) SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1000 10000 t1 0.01 0.1 1.0 Figure 12. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ10023 The Safe Operating Area figures shown in Figures 13 and 14 are specified for these devices under the test conditions shown. 100 50 IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 TC = 25C BONDING WIRE LTD THERMAL LTD SECOND BREAKDOWN LTD 2.0 100 200 400 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) SAFE OPERATING AREA INFORMATION FORWARD BIAS 10 s (TURN-ON SWITCHING) dc Figure 13. Maximum Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS ICM , PEAK COLLECTOR CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0 100 RBE = 24 200 300 IC/IB 20 25C TJ 100C TURN-OFF LOAD LINE 2 V VBE(off) 8 V 400 500 600 700 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics. VCEM, PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. Maximum RBSOA, Reverse Bias Safe Operating Area 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 60 40 THERMAL DERATING 20 0 0 40 80 120 160 200 TC, CASE TEMPERATURE (C) Figure 15. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ10023 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE (TO-3) ISSUE J Motorola Bipolar Power Transistor Device Data 7 MJ10023 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 8 Motorola Bipolar Power Transistor DeviceMJ10023/D Data |
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